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Proceedings Paper

CD control of low-k-factor step-and-scan lithography
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Paper Abstract

On-product or 'output' dose and contrast variations (the temporal and spatial changes to image intensity and modulation captured in the developed wafer pattern) are the dominant contributors to across-field and across-wafer critical dimension (CD) variation. While the 'input' dose and focus degrees of freedom of step-and-scan tools offer the potential for improved CD control, its realization at low k1 depends on our ability to adjust tool settings such that the output contrast is maximized and the output dose is clamped to a desired operating point. Our paper describes our application of output dose and contrast, derived from the measurement of on-product targets, to the CD characterization of step-and- scan lithography at 150 nm ground rules and below. We demonstrate the means for simultaneous input dose and focus correction and quantify the consequent benefit to CD control.

Paper Details

Date Published: 14 September 2001
PDF: 10 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435729
Show Author Affiliations
Christopher P. Ausschnitt, IBM Semiconductor Research and Development Ctr. (United States)
Christopher J. Progler, IBM Semiconductor Research and Development Ctr. (United States)
William Chu, IBM Semiconductor Research and Development Ctr. (United States)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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