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Proceedings Paper

Trench pattern lithography for 0.13- and 0.10-um logic devices at 248-nm and 193-nm wavelengths
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Paper Abstract

In this paper, logic device patterning of 0.16-micrometer trenches for the 0.13-micrometer node using 248-nm light and 0.13-micrometer trenches for the 0.10-micrometer node using 193-nm light is investigated. Severe proximity effect through all pitches and small depth of focus for isolated trenches bring great challenges. To produce manufacture-worthy process windows, lithographic techniques such as optical proximity correction, annular illumination, sub-resolution assist features, and attenuated phase-shift mask are considered. No prominent performance gain is achieved in the aforementioned combination if full-pitch-range performance is required. However, manufacture-worthy 0.5-micrometer depth of focus can be obtained through all pitches by replacing annular illumination with quadrupole illumination while retaining sub- resolution assist features and optical proximity correction, even without having to resort to attenuated phase-shifting mask. We also observe that attenuated phase-shift mask or dipole illumination improves depth of focus and photoresist profile of dense patterns only in the cases studied.

Paper Details

Date Published: 14 September 2001
PDF: 17 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435728
Show Author Affiliations
Ying-Ying Wang, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Hua Tai Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Shinn Sheng Yu, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Chun-Kuang Chen, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Yao Ching Ku, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co., Ltd. (United States)
Burn Jeng Lin, Taiwan Semiconductor Manufacturing Co., Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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