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Proceedings Paper

Printing 130-nm DRAM isolation pattern: Zernike correlation and tool improvement
Author(s): Jan B.P. van Schoot; Nakgeuon Seong; Bernd Geh; Martin Burkhardt; Paul Graeupner; Gerd Reisinger; Rian Rubingh; Manfred Suddendorf; Jo Finders; Erwin Rikkers
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Paper Abstract

To meet lithographic requirements for the 130nm generation, the influence of aberrations on printing of various patterns is investigated. This paper shows a process for patterns that are sensitive to coma and three wave. The aberration sensitivities are calculated and the effect on printing experimentally verified. This analysis leads to slight changes in lens adjustment strategy to accommodate the printing of specific DRAM patterns. Additional improvements in materials and surface figures, as well as reduction in process-induced aberrations and associated RMS wave front error, enable the production of tools that are capable of printing the 130nm device generation. The importance of collaboration between makers of lithography tools and their customers cannot be underestimated in finding tool specific limitations. Because of the length of the design cycle of lithography tools it is necessary to perform analysis of device patterns years in advance. The current work also indicates that patterns historically used to determine lens specifications, such as dense and isolated lines, are insufficient to fully determine lens specifications. This paper also outlines techniques that can be used to reduce aberration sensitivities by use of resolution enhancement techniques. This is another area where close interaction between vendor and customer is needed.

Paper Details

Date Published: 14 September 2001
PDF: 12 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435723
Show Author Affiliations
Jan B.P. van Schoot, ASML (Netherlands)
Nakgeuon Seong, Samsung Electronics Co., Ltd. (United States)
Bernd Geh, Carl Zeiss (United States)
Martin Burkhardt, ASML (United States)
Paul Graeupner, Carl Zeiss (Germany)
Gerd Reisinger, Carl Zeiss (Germany)
Rian Rubingh, ASML (Netherlands)
Manfred Suddendorf, ASML (Netherlands)
Jo Finders, ASML (Netherlands)
Erwin Rikkers, ASML (Netherlands)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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