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Proceedings Paper

Characterization of linewidth variation on 248- and 193-nm exposure tools
Author(s): Allen H. Gabor; Timothy A. Brunner; Jia Chen; Norman Chen; Sadanand Deshpande; Richard A. Ferguson; David V. Horak; Steven J. Holmes; Lars W. Liebmann; Scott M. Mansfield; Antoinette F. Molless; Christopher J. Progler; Paul A. Rabidoux; Deborah Ryan; Peter Talvi; Len Tsou; Ben R. Vampatella; Alfred K. K. Wong; Qingyun Yang; Chienfan Yu
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Paper Abstract

The line-width variation of a 193 nm lithographic process utilizing a 0.60 NA scanner and a binary reticle is compared to that of a 248 nm lithographic processes utilizing a 0.68 NA scanner and a variety of reticle technologies. These include binary, attenuated PSM with assist features and alternating PSM reticles. Despite the fact that the 193 nm tool has a lower NA and that the data was generated using a binary reticle, the 193 nm lithographic process allows for the line-width values to be pushed lower than previously achieved with 248 nm lithographic processes. The 3-sigma values from 4000 electrical line-width measurements per wafer (160 measurements per 25*25 mm field, 25 fields per wafer) were calculated for different mask features. The 193 nm process was capable of reaching line-widths needed for future generations of advance logic chips. Compared to the 193 nm process utilizing a binary reticle, only the 248 nm processes utilizing either an attenuated PSM with assist features or an alternating PSM reticle had similarly low line-width variation. The 248 nm processes utilizing a binary reticle had higher line-width variation even at larger poly gate conductor line-widths.

Paper Details

Date Published: 14 September 2001
PDF: 6 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435708
Show Author Affiliations
Allen H. Gabor, IBM Microelectronics Div. (United States)
Timothy A. Brunner, IBM Microelectronics Div. (United States)
Jia Chen, IBM Microelectronics Div. (United States)
Norman Chen, United Microelectronics Corp. (Taiwan)
Sadanand Deshpande, IBM Microelectronics Div (United States)
Richard A. Ferguson, IBM Microelectronics Div. (United States)
David V. Horak, IBM Microelectronics Div. (United States)
Steven J. Holmes, IBM Microelectronics Div. (United States)
Lars W. Liebmann, IBM Microelectronics Div. (United States)
Scott M. Mansfield, IBM Microelectronics Div. (United States)
Antoinette F. Molless, IBM Microelectronics Div. (United States)
Christopher J. Progler, IBM Microelectronics Div. (United States)
Paul A. Rabidoux, IBM Microelectronics Div. (United States)
Deborah Ryan, IBM Microelectronics Div. (United States)
Peter Talvi, IBM Microelectronics Div. (United States)
Len Tsou, IBM Microelectronics Div. (United States)
Ben R. Vampatella, IBM Microelectronics Div. (United States)
Alfred K. K. Wong, IBM Microelectronics Div. (Hong Kong)
Qingyun Yang, IBM Microelectronics Div. (United States)
Chienfan Yu, IBM Microelectronics Div. (United States)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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