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Proceedings Paper

Can DUV take us below 100 nm?
Author(s): Jo Finders; Louis Jorritsma; Mark Eurlings; Richard Moerman; Henk van Greevenbroek; Jan B.P. van Schoot; Donis G. Flagello; Robert John Socha; Thomas Stammler
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Paper Abstract

Currently, the 130 nm SIA node is being implemented at leading edge semiconductor manufacturing facilities. Previously, this node appeared to be the insertion point for 193 nm lithography. However, it is evident that for the majority of applications 248 nm will be the wavelength of choice. This once again raises the question how far DUV lithography (248 nm) will take us. To investigate this, overlay, imaging and productivity related issues have to be considered. Although these items become more and more linked at low k1-factors (e.g. overlay and imaging), this paper will focus on some of the imaging related topics.

Paper Details

Date Published: 14 September 2001
PDF: 13 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435706
Show Author Affiliations
Jo Finders, ASML (Netherlands)
Louis Jorritsma, ASML (Netherlands)
Mark Eurlings, ASML (Netherlands)
Richard Moerman, ASML (Netherlands)
Henk van Greevenbroek, ASML (Netherlands)
Jan B.P. van Schoot, ASML (Netherlands)
Donis G. Flagello, ASML (United States)
Robert John Socha, ASML (United States)
Thomas Stammler, Carl Zeiss (Germany)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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