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Proceedings Paper

Optical processing using photorefractive GaAs and InP
Author(s): Duncan Tsuen-Hsi Liu; Li-Jen Cheng; Keung L. Luke
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Paper Abstract

The unique features of photorefractive compound semiconductors are presented. The advantages of this class of nonlinear optical materials for optical processing are illustrated with examples using GaAs and InP. The difference between GaAs and InP in the laser power density requirement is discussed.

Paper Details

Date Published: 1 June 1991
PDF: 11 pages
Proc. SPIE 1409, Nonlinear Optics II, (1 June 1991); doi: 10.1117/12.43570
Show Author Affiliations
Duncan Tsuen-Hsi Liu, Jet Propulsion Lab. (United States)
Li-Jen Cheng, Jet Propulsion Lab. (United States)
Keung L. Luke, California State Univ. (United States)


Published in SPIE Proceedings Vol. 1409:
Nonlinear Optics II
Robert A. Fisher; John F. Reintjes, Editor(s)

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