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Proceedings Paper

Optical proximity correction of critical layers in DRAM process of 0.12-um minimum feature size
Author(s): Yong-Ho Oh; Jai-Cheol Lee; Ki-Chon Park; Chun-Soo Go; Sungwoo Lim
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Paper Abstract

We studied whether the critical layers of 0.12 micrometer DRAM could be processed with optical lithography techniques assuming ArF excimer laser as a light source. To enhance the aerial image fidelity and process margin, phase shift mask (PSM) patterns as well as binary mask patterns are corrected with in-house developed optical proximity correction (OPC) software. As the result, we found that the aerial image of the critical layers of a DRAM cell with 0.12 micrometer design rule could not be reproduced with binary masks. But, if we use PSM or optical proximity corrected PSM, the fidelity of aerial image, resolution and process margin are so much enhanced that they could be processed with optical lithography.

Paper Details

Date Published: 14 September 2001
PDF: 8 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435699
Show Author Affiliations
Yong-Ho Oh, Wonkwang Univ. (South Korea)
Jai-Cheol Lee, Wonkwang Univ. (South Korea)
Ki-Chon Park, Wonkwang Univ. (South Korea)
Chun-Soo Go, Wonkwang Univ. (South Korea)
Sungwoo Lim, Wonkwang Univ. (South Korea)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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