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Proceedings Paper

Impact of illumination coherence and polarization on the imaging of attenuated phase-shift masks
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Paper Abstract

Attenuated phase shift masks (PSM) have been widely used in photolithography to enhance resolution and process margin. The advantage of attenuated PSM is further enhanced when it is combined with off-axis illumination (OAI) and optical proximity correction (OPC). This combination results in better performance than when attenuated PSM or OAI is used separately. However, the performance of isolated features is still a limiting factor to improve process margin. One result of such resolution enhancement techniques is conjunction with high numerical aperture imaging systems is an increase in the angles of the light used to form the images. Polarization mismatching among interacting beams becomes worse as the incident angle increases. In this paper we use contact hole patterning as an example to demonstrate how polarization plays a role with different partial coherence factors. PROLITH/3D simulation was used to compare and explain experimental results.

Paper Details

Date Published: 14 September 2001
PDF: 11 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435694
Show Author Affiliations
Z. Mark Ma, Texas Instruments Inc. (United States)
Chris A. Mack, KLA-Tencor (United States)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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