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Proceedings Paper

Simulation of optical lithography from distorted photomasks
Author(s): Zheng Cui; Jinglei Du; Yangsu Zheng; Yongkang Guo
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Paper Abstract

Simulation of photomask patterning process and optical lithography at wafer level has been combined to investigate the influence of a distorted photomask feature on final photoresist image. Unlike the previous optical lithography simulations which were based on ideal mask designs, the optical lithography simulation presented in this paper is based on distorted masks. The distorted mask comes from electron beam lithography simulation or laser direct write simulation. Proximity effects in e-beam lithography or laser direct write has been taken into account. The results have shown that optical proximity effect is worsened if a distorted mask is used in the optical lithography simulation, instead of an ideal mask.

Paper Details

Date Published: 14 September 2001
PDF: 8 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435689
Show Author Affiliations
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)
Jinglei Du, Sichuan Univ. (China)
Yangsu Zheng, Sichuan Univ. (China)
Yongkang Guo, Sichuan Univ. (China)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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