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Proceedings Paper

Challenges for the 100-nm node
Author(s): Harry Sewell; Pankaj Raval; Victor F. Bunze
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Paper Abstract

As the semiconductor industry accelerates its pace to move to 100-nm lithography node, a shift in exposure wavelength from 248 nm to 193 nm seems to be inevitable. Correspondingly, the change of wavelength and the desire to maintain or improve productivity offers some big challenges that must be resolved in order to continue our march into sub-wavelength optical lithography. This paper discusses a number of challenges that must be addressed, and offers how some of them can be addressed with advanced technology used by full-field catadioptric scanning lithography systems.

Paper Details

Date Published: 14 September 2001
PDF: 8 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435685
Show Author Affiliations
Harry Sewell, SVG Lithography Systems, Inc. (United States)
Pankaj Raval, SVG Lithography Systems, Inc. (United States)
Victor F. Bunze, SVG Lithography Systems, Inc. (United States)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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