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Proceedings Paper

Mask considerations for manufacturing assist features
Author(s): Ji-Hyeon Choi; Won-Il Cho; Byeongsoo Kim; Seung-Hune Yang; Seong-Yong Moon; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn
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Paper Abstract

Assist features are recently employed in high density devices. But the application seems to be burdening to mask manufacturers. In this paper, considerations for making masks bearing assist features are discussed. A mask grid size, minimum resolution, CD linearity, pattern fidelity, and mask inspectability are among those considerations. For a 0.13 micrometer node, the grid size <EQ 5 nm (4X) is recommended according to our simulation. A high acceleration voltage (50 keV) e-beam writer is found to be a good tool for 0.26 micrometer (4X) assist features necessary for 0.13 micrometer node. A currently available inspection machine should give a good potential to detect defects on a 0.18 micrometer (4X) assist feature bearing mask.

Paper Details

Date Published: 14 September 2001
PDF: 10 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435681
Show Author Affiliations
Ji-Hyeon Choi, Samsung Electronics Co., Ltd. (South Korea)
Won-Il Cho, Samsung Electronics Co., Ltd. (South Korea)
Byeongsoo Kim, Samsung Electronics Co., Ltd. (South Korea)
Seung-Hune Yang, Samsung Electronics Co., Ltd. (South Korea)
Seong-Yong Moon, Samsung Electronics Co., Ltd. (South Korea)
Seong-Woon Choi, Samsung Electronics Co., Ltd. (South Korea)
Woo-Sung Han, Samsung Electronics Co., Ltd. (South Korea)
Jung-Min Sohn, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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