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Proceedings Paper

Testing of optical components for microlithography at 193-nm and 157-nm
Author(s): Klaus R. Mann; Oliver Apel; G. Eckert; Christian Goerling; Uwe Leinhos; Bernd Schaefer
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Paper Abstract

Absorption loss in UV optics during 193nm and 157nm irradiation is investigated by employing a high-resolution calorimetric technique which allows determining both single and two-photon absorptance at low energy densities. UV calorimetry is also employed to investigate laser induced aging phenomena, e.g. color center formation in fused silica. A separation of transient and cumulative effects can be achieved, giving insight into the loss mechanisms. A strong wavelength dependence of the DUV and VUV absorption characteristics in CaF2 substrates is observed. In addition, Hartmann-Shack wavefront measurements are presented, which allow on-line monitoring of laser-induced compaction in fused silica.

Paper Details

Date Published: 14 September 2001
PDF: 9 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435671
Show Author Affiliations
Klaus R. Mann, Laser-Lab. Goettingen eV (Germany)
Oliver Apel, Laser-Lab. Goettingen eV (Germany)
G. Eckert, Laser-Lab. Goettingen eV (Germany)
Christian Goerling, Laser-Lab. Goettingen eV (Germany)
Uwe Leinhos, Laser-Lab. Goettingen eV (Germany)
Bernd Schaefer, Laser-Lab. Goettingen eV (Germany)

Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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