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Proceedings Paper

Model-based OPC for first-generation 193-nm lithography
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Paper Abstract

The first 193 nm lithography processes using model-based OPC will soon be in production for 0.13 micrometer technology semiconductor manufacturing. However, the relative immaturity of 193 nm resist, etch and reticle processes places considerable strain upon the OPC software to compensate increased non-linearity, proximity bias, corner rounding and line-end pullback. We have evaluated three leading model-based OPC software packages with 193 nm lithography on random logic poly gate designs for the 0.13 micrometer generation. Our analysis has been performed for three different OPC reticle write processes, two leading 193 nm resists and multiple illumination conditions. The results indicate that the maturity of the model-OPC software tools for 193 nm lithography is generally good, although specific improvements are recommended.

Paper Details

Date Published: 14 September 2001
PDF: 12 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435670
Show Author Affiliations
Kevin D. Lucas, Motorola Inc. (Belgium)
James C. Word, IMEC (United States)
Geert Vandenberghe, IMEC (Belgium)
Staf Verhaegen, IMEC (Belgium)
Rik M. Jonckheere, IMEC (Belgium)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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