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Proceedings Paper

Long pulse duration of F2 laser for 157-nm lithography
Author(s): Hidenori Watanabe; Naoki Kitatochi; Kouji Kakizaki; Akifumi Tada; Jun Sakuma; Tatsuya Ariga; Kazuaki Hotta
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Paper Abstract

An ultra narrow line width of the F2 laser, narrower than 0.2pm, is required for a CaF2 only refractive optics exposure system. Also, a low peak laser power is needed for the extension of the optics lifetime. These ultra narrow line width and low peak power are achievable by long pulse duration. We, Association of Super-Advanced Electronics Technologies (ASET), are developing an ultra line narrowed F2 laser below 0.2pm, with 5mJ high output energy, by adopting a 2-stage F2 laser system, which consists of an oscillator and an amplifier. The oscillator for this 2-stage system is required to have an ultra narrow line width of below 0.2pm. We have developed F2 laser with very long laser pulse duration of over 65ns (Tis: the integral squire pulse width), in a free running operation. And, by installing a line-narrowing module (LNM) in this F2 laser, an ultra narrow line width of below 0.2 pm (FWHM, deconvolved) has been realized. This F2 laser was successfully used for the oscillator of 2-stage system.

Paper Details

Date Published: 14 September 2001
PDF: 6 pages
Proc. SPIE 4346, Optical Microlithography XIV, (14 September 2001); doi: 10.1117/12.435639
Show Author Affiliations
Hidenori Watanabe, ASET-Association of Super-Advanced Electronics Technologies (Japan)
Naoki Kitatochi, ASET-Association of Super-Advanced Electronics Technologies (Japan)
Kouji Kakizaki, Gigaphoton, Inc. (Japan)
Akifumi Tada, Gigaphoton, Inc. (Japan)
Jun Sakuma, ASET-Association of Super-Advanced Electronics Technologies (Japan)
Tatsuya Ariga, ASET-Association of Super-Advanced Electronics Technologies (Japan)
Kazuaki Hotta, ASET-Association of Super-Advanced Electronics Technologies (Japan)


Published in SPIE Proceedings Vol. 4346:
Optical Microlithography XIV
Christopher J. Progler, Editor(s)

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