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Proceedings Paper

Thick film odor sensor with (gamma)-Fe2O3 semiconductor oxide
Author(s): Gabriela Telipan
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Paper Abstract

(gamma) -Fe2O3 is a n-type semiconductor oxide and it has been extensively studied as a gas sensing material. It is usually obtained by oxidizing Fe3O4 at 250 degree(s)C, temperature confirmed by the DTA curve. (gamma) -Fe2O3 has a spinel type crystal structure with a lattice parameter of 8,3 angstroms.

Paper Details

Date Published: 6 August 2001
PDF: 8 pages
Proc. SPIE 4328, Smart Structures and Materials 2001: Sensory Phenomena and Measurement Instrumentation for Smart Structures and Materials, (6 August 2001); doi: 10.1117/12.435538
Show Author Affiliations
Gabriela Telipan, Research and Development Institute for Electrical Engineering (Romania)


Published in SPIE Proceedings Vol. 4328:
Smart Structures and Materials 2001: Sensory Phenomena and Measurement Instrumentation for Smart Structures and Materials
Eric Udd; Daniele Inaudi, Editor(s)

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