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Proceedings Paper

Signal, noise, and readout considerations in the development of amorphous silicon photodiode arrays for radiotherapy and diagnostic x-ray imaging
Author(s): Larry E. Antonuk; John M. Boudry; Chung-Won Kim; M. Longo; E. J. Morton; John Yorkston; Robert A. Street
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Paper Abstract

Recent advances in the fabrication of sensors and transistors from hydrogenated amorphous silicon are allowing the creation of flat panel, large area, radiation-damage-resistant arrays for radiotherapy and diagnostic imaging. A straightforward application of available a-Si:H technology involves the configuration of photodiode sensors coupled with field effect transistors into regular 2-dimensional pixel patterns. While the specifications of the array design must be tailored to the demands of the imaging application, the design is at the same time constrained by various array parameters. Considerations affecting choices for these parameters and how they relate to the signal, noise, and readout properties of radiotherapy arrays are presented and some initial data reported. Implications for a-Si:H diagnostic imagers are discussed.

Paper Details

Date Published: 1 July 1991
PDF: 12 pages
Proc. SPIE 1443, Medical Imaging V: Image Physics, (1 July 1991); doi: 10.1117/12.43434
Show Author Affiliations
Larry E. Antonuk, Univ. of Michigan Medical Ctr. (United States)
John M. Boudry, Univ. of Michigan Medical Ctr. (United States)
Chung-Won Kim, Univ. of Michigan Medical Ctr. (South Korea)
M. Longo, Univ. of Michigan (United States)
E. J. Morton, Univ. of Michigan Medical Ctr. (United States)
John Yorkston, Univ. of Michigan Medical Ctr. (United States)
Robert A. Street, Xerox Palo Alto Research Ctr. (United States)

Published in SPIE Proceedings Vol. 1443:
Medical Imaging V: Image Physics
Roger H. Schneider, Editor(s)

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