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Proceedings Paper

Integrated InGaAs-InP quantum wire lasers and Stark effect modulators for 1.55-micro applications
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Paper Abstract

Quantum wire lasers and modulators offer superior performance over their quantum well counterparts. This paper presents simulation of an integrated InGaAs-InP quantum wire laser-modulator structure operating at 1.55 μm. In the case of quantum wire lasers, we have computed the optical gain as a function of current density for wires having widths ranging between 60-100 Å. For example, the threshold current density of as low as 61 A/cm2 is computed for a wire with a width of 80 Å. In case of quantum wire modulators, we compute the changes in the absorption coefficient and index of refraction due to an external electric field ranging between 0-120kV/cm. For example, the percentage of absorption changes (Δα/α) between 30kV/cm and 60kV/cm applied electric field is about 450% for a 80 Å quantum wire. The changes in electro-absorption or electro-refraction can be maximized by choosing optimum combination of wire dimensions, operating wavelength and electric field to obtain lasing and modulation.

Paper Details

Date Published: 18 June 2002
PDF: 9 pages
Proc. SPIE 4640, Integrated Optics: Devices, Materials, and Technologies VI, (18 June 2002); doi: 10.1117/12.433295
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Published in SPIE Proceedings Vol. 4640:
Integrated Optics: Devices, Materials, and Technologies VI
Yakov S. Sidorin; Ari Tervonen, Editor(s)

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