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Proceedings Paper

Silicon carbon nitride films as new materials obtained by plasma chemical vapor deposition from novel precursor
Author(s): Tamara P. Smirnova; Aleksander N. Shmakov; Aram M. Badalian; Vasiliy V. Kaichev; Valery I. Bukhtiyarov; Vladimer I. Rachlin; Anna N. Fomina
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Paper Abstract

Silicon carbonitride films were synthesized by RP CVD process using the novel single-source precursor that is derivative of 1,1-dimethylhydrazine, (CH3)2HSiNHN(CH3)2. The films were characterized by X- ray photoelectron (XPS), infrared (FTIR) and ultraviolet (UV) spectroscopy. The microstructure of the films was examined by scanning electron microscopy (SEM) and diffraction of synchrotron radiation (DSR) methods. XPS and FT-IR spectroscopy studies showed that the Si-C and Si-N are the main bonds in the deposited films. Concerning the C-N bonds, the results are less obvious: they are either negligible or not present at all. The films were found to be predominately amorphous with a number of crystallites within the unstructured matrix. The crystals appearance, their dimensions and crystal form did not depend on substrate temperature. We hypothesized that crystallization could happen in the gas phase during deposition or nanocrystals were formed by the strain induced after a certain thickness of the amorphous film. The crystals were assigned to the structure closed to (alpha) -Si3N4 phase. According to FTIR and XPS data it is clear that the chemical bonding and the atomic local order in the amorphous matrix are much more complicated than those of Si3N4-SiC mixtures. We concluded that tetrahedral configurations of silicon carbide and silicon nitride units with mixed C/N environment are hypothetically formed. The films are highly resistant to thermal degradation. It was also demonstrated that this new material has a band gap that was variable from 2.0 eV to 4.7 eV.

Paper Details

Date Published: 9 July 2001
PDF: 11 pages
Proc. SPIE 4467, Complex Mediums II: Beyond Linear Isotropic Dielectrics, (9 July 2001); doi: 10.1117/12.432950
Show Author Affiliations
Tamara P. Smirnova, Institute of Inorganic Chemistry (Russia)
Aleksander N. Shmakov, Boreskov Institute of Catalysis (Russia)
Aram M. Badalian, Institute of Inorganic Chemistry (Russia)
Vasiliy V. Kaichev, Boreskov Institute of Catalysis (Russia)
Valery I. Bukhtiyarov, Boreskov Institute of Catalysis (Russia)
Vladimer I. Rachlin, Favorsky Institute of Chemistry (Russia)
Anna N. Fomina, Favorsky Institute of Chemistry (Russia)


Published in SPIE Proceedings Vol. 4467:
Complex Mediums II: Beyond Linear Isotropic Dielectrics
Akhlesh Lakhtakia; Werner S. Weiglhofer; Ian J. Hodgkinson, Editor(s)

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