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Proceedings Paper

Characterization of anodic oxide for GaAs-based laser diodes
Author(s): Rodica V. Ghita; D. Pantelica; F. Negoita; S. Lazanu
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Paper Abstract

Anodic film oxide was deposited in a alcohol-glycol-water (AGW) solution on n-GaAs for passivation purpose in stripe technology for laser diodes. The characteristics of anodic oxide were measured by scanning electron microscopy (SEM), Rutherford backscattering (RBS) analysis and elastic recoil detection (ERD) techniques. The result indicates a complex oxide structure in the phase base Ga2O3:As2O3(1:1) joined together with carbon bonds. Due to the presence of carbon in anodic oxide, laser diodes are exposed to rapid degradation during operation.

Paper Details

Date Published: 29 June 2001
PDF: 5 pages
Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); doi: 10.1117/12.432918
Show Author Affiliations
Rodica V. Ghita, National Institute for Materials Physics (Romania)
D. Pantelica, National Institute for Physics and Nuclear Engineering (Romania)
F. Negoita, National Institute for Physics and Nuclear Engineering (Romania)
S. Lazanu, National Institute for Materials Physics (Romania)


Published in SPIE Proceedings Vol. 4430:
ROMOPTO 2000: Sixth Conference on Optics

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