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Proceedings Paper

Laser-thermal diagnostics (LTD) of hidden inhomogeneities in multilayer structures
Author(s): Leonid L. Fedorenko; Vadym V. Naumov; V. Plakhotny; Sergey V. Svechnikov; N. Yusupov
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Paper Abstract

The possibilities of the laser-thermal diagnostics of the hidden defects in the solid state materials and multilayer structures are reported. The approach is based on the spectral analysis of the thermal radiation flux induced by the high power pulsed laser-surface interaction. To prove the method, the next things have been studied: (1) the distribution of the temperature and thermal radiation fields in the metal and semiconductor structures that is heated by the pulsed laser radiation under various laser regimes and material parameters; (2) the kinetics of surface and interface charge carriers recombination in the multilayer structures; (3) the thermal emission of the inherent radiation of multilayer structures that determines their basic characteristics: sizes of the macrodefects, thickness of interlayers, depth of penetration, thermal and electric conductivity, rate of heating and cooling of the local areas under the laser beam spot. It was found that even small variation in conditions of the laser-surface interaction due to the metal and dielectric defects and heterogeneity in the material structure can produce large changes in the amplitude and spectra of the laser induced thermal radiation, so such a technique could serve as a powerful tool for noninvasive inspection and express control of the hidden topology in the material structure, and the velocity of the surface carriers recombination of semiconductors can be monitored and controlled well.

Paper Details

Date Published: 29 June 2001
PDF: 7 pages
Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); doi: 10.1117/12.432894
Show Author Affiliations
Leonid L. Fedorenko, Institute of Semiconductor Physics (Ukraine)
Vadym V. Naumov, Institute of Semiconductor Physics (Ukraine)
V. Plakhotny, Institute of Semiconductor Physics (Ukraine)
Sergey V. Svechnikov, Institute of Semiconductor Physics (Ukraine)
N. Yusupov, Institute of Semiconductor Physics (Ukraine)


Published in SPIE Proceedings Vol. 4430:
ROMOPTO 2000: Sixth Conference on Optics

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