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Proceedings Paper

Ultraviolet radiation sensors on the basis of semiconductors
Author(s): Valerian Dorogan; Tatiana Vieru; Mihail Manole; Roxana Savastru; Tudor Zisu
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Paper Abstract

This paper deals with elaborating and manufacturing of new structure of UV radiation sensors on the basis of single- crystal Si. The structure consists of two photoactive cells, differentially connected to loading resistor. One cell is covered with a layer, transparent for visible and IR radiation and non-transparent for UV radiation. Differential connection excludes the common for both cells components. Thus, the photocurrent of differential sensor is proportional only to UV radiation intensity.

Paper Details

Date Published: 29 June 2001
PDF: 6 pages
Proc. SPIE 4430, ROMOPTO 2000: Sixth Conference on Optics, (29 June 2001); doi: 10.1117/12.432818
Show Author Affiliations
Valerian Dorogan, Technical Univ. of Moldova (Moldova)
Tatiana Vieru, Technical Univ. of Moldova (Moldova)
Mihail Manole, Technical Univ. of Moldova (Moldova)
Roxana Savastru, National Institute of Research and Development for Optoelectronics (Romania)
Tudor Zisu, National Institute of Research and Development for Optoelectronics (Romania)


Published in SPIE Proceedings Vol. 4430:
ROMOPTO 2000: Sixth Conference on Optics

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