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Proceedings Paper

Light emission and absorption processes in a bidirectional wavelength converter/emitter
Author(s): Jiing Yeh Wah; Rifat Yenidunya; Angela Dyson; Adrian Boland-Thoms; Naci Balkan; Michael J. Adams
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Paper Abstract

Hot Electron Light Emitting and Lasing Semiconductor Heterojunction device is a novel emitter that utilizes hot carrier transport parallel to the layers of AlxGa1-xAs p-n junction containing GaAs quantum well(s) in the depletion region. Electrons and holes drifting in their respective channels are heated up temperatures well above the lattice temperature and consequently transferred in real space over the built-in potential barrier into the GaAs quantum well via phonon assisted tunneling and or thermionic emission. The recombination occurs in the quantum well. The Top Hat structure HELLISH presented in this work provides a new functionality of the device where the n and p-layers are contacted separately but are biased with the same voltage longitudinally. In this configuration hot carrier injection into the active region is further enhanced in the vicinity of the cathode due to the effective forward biasing of the junction. Therefore, the emission intensity is increased compared with the conventional HELLISH device. In the vicinity of the anode, however, there is an effective reverse biasing and in this region the top hat device acts as an absorber. As a result of these two features the device can be operate as a wavelength converter and amplifier. The intensity of the emitted light is independent of the polarity of the applied voltage. However, positions of the absorber and emitter depend on the polarity. The device may offer a wide range of light logic functions. The speed and the efficiency of the device depend on both the longitudinal and the transverse fields. A simple 2D model is developed to explain the device dynamics.

Paper Details

Date Published: 9 July 2001
PDF: 11 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432629
Show Author Affiliations
Jiing Yeh Wah, Univ. of Essex (United Kingdom)
Rifat Yenidunya, Univ. of Essex (United Kingdom)
Angela Dyson, Univ. of Essex (United Kingdom)
Adrian Boland-Thoms, Univ. of Essex (United Kingdom)
Naci Balkan, Univ. of Essex (United Kingdom)
Michael J. Adams, Univ. of Essex (United Kingdom)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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