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Proceedings Paper

1.5-um surface emission from GaInAsP/InP HELLISH structures
Author(s): Russell Sceats; Carl J. Hepburn; Richard J. Potter; Angela Dyson; Naci Balkan; Michael J. Adams
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Paper Abstract

Hot electron light emitting and lasing semiconductor heterostructure (HELLISH) is a novel longitudinal transport, surface emitting device. The operation of the device as a light emitter and vertical cavity surface emitting laser (VCSEL) has been previously demonstrated by us for the GaAs/GaAlAs material system. A basic GaInAsP/InP HELLISH structure and an advanced GaInAsP/InP HELLISH VCSEL structure are described in this work and designed for 1.5 micrometers emission. The basic HELLISH structure consists of a GaInAsP quantum well placed on the n-side of the InP p-n junction. The advanced structure has a similar active region to the basic HELLISH structure, but with a resonant cavity defined by the addition of DBRs, where the current is injected directly into the active region without having to pass through the DBRs. The modeling and design of these structures are described, including self-consisting numerical 1D solutions of the Poisson and Schrodinger equations.

Paper Details

Date Published: 9 July 2001
PDF: 10 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432628
Show Author Affiliations
Russell Sceats, Univ. of Essex (United Kingdom)
Carl J. Hepburn, Univ. of Essex (United Kingdom)
Richard J. Potter, Univ. of Essex (United Kingdom)
Angela Dyson, Univ. of Essex (United Kingdom)
Naci Balkan, Univ. of Essex (United Kingdom)
Michael J. Adams, Univ. of Essex (United Kingdom)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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