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Proceedings Paper

Nonradiative recombination and efficiency of InGaN quantum well light-emitting diodes
Author(s): G. B. Ren; Huw D. Summers; Peter Blood; Richard Perks; David P. Bour
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Paper Abstract

The electroluminescence efficiency of InGaN LEDs is surprisingly high for structures which have high defect concentrations due to growth on mismatched substrates. We have measured the high-injection non-radiative lifetime in InGaN LEDs by analysis of the light current characteristics. We find that the values of (tau) nr decrease from 18ns at 200K to 5ns at 400K. This behavior is thermally activated with an activation energy of 40 meV which is compatible with the hypothesis that the temperature dependence is due to thermal delocalization of carriers form potential minima caused by modest fluctuations in In composition in the quantum well. We determine the internal quantum efficiency to lie between 52 percent and 65 percent at room temperature over the current range employed.

Paper Details

Date Published: 9 July 2001
PDF: 7 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432626
Show Author Affiliations
G. B. Ren, Univ. of Wales/Cardiff (United Kingdom)
Huw D. Summers, Univ. of Wales/Cardiff (United Kingdom)
Peter Blood, Univ. of Wales/Cardiff (United Kingdom)
Richard Perks, Univ. of Wales/Cardiff (United Kingdom)
David P. Bour, Xerox Palo Alto Research Ctr. (United States)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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