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Proceedings Paper

Nonlinear dynamics in a graded quantum well placed in a GaAlAs p-n junction
Author(s): Naci Balkan; Huseyin Sari; Andreas Schroeder; Yuksel Ergun; Ismail Sokmen; John Stuart Roberts
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Paper Abstract

Theoretical and experimental results concerning the study of a novel wavelength converter amplifier, which can be tuned, with the amplification of an external voltage are presented. The device consists of a Ga1-xAlxAs graded quantum well, placed on the n-side of the depletion region of a Ga1-xAlxAs p-n junction. As a result of the competition between the built-in field and the grading, in the absence of an external bias, the quantum well acts as an isolated well. Forward biasing of the junction reduces the built-in field; thus the field associated with the grading becomes effective. The tuning of the operation wavelength is based on the anti-Quantum Confined Stark Effect and achieved during the forward biasing. In this study we present the numerical results based on a 2D modeling of the device where exciton binding energy, absorption co-efficient and transition energy are obtained as a function of applied field. Experimental results show a tuning range of around 40nm.

Paper Details

Date Published: 9 July 2001
PDF: 11 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432622
Show Author Affiliations
Naci Balkan, Univ. of Essex (United Kingdom)
Huseyin Sari, Cumhuriyet Univ. (Turkey)
Andreas Schroeder, Univ. of Essex (United Kingdom)
Yuksel Ergun, Cumhuriyet Univ. (Turkey)
Ismail Sokmen, Dokuz Eylul Univ. (Turkey)
John Stuart Roberts, Univ. of Sheffield (United Kingdom)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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