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Proceedings Paper

Characteristics of laser diodes influenced by electron-dominant nonuniform carrier distribution
Author(s): Bing-Ruey Wu; Ching-Fuh Lin; Lih-Wen Laih; Tien-Tsorng Shih
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Paper Abstract

Electron-determined nonuniform carrier distribution inside multiple quantum wells (MQW) is experimentally discovered. Two groups of mirror-imaged nonidentical quantum well InGaAsP/InP lasers diodes are designed, fabricated, and measured. Measured characteristics of both groups show that electron, instead of hole, is the dominant carrier affecting carrier distribution. Carrier transport effects including carrier diffusion/drift and capture/emission processes inside MQW are described to explain the nonuniform carrier distribution. The reason for the electron dominated carrier distribution is because electron takes less time to be capture into QW 2D states than hole does. The sequence of the nonidentical QWS is also shown to have significant influence on device characteristics.

Paper Details

Date Published: 9 July 2001
PDF: 11 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432620
Show Author Affiliations
Bing-Ruey Wu, National Taiwan Univ. (Taiwan)
Ching-Fuh Lin, National Taiwan Univ. (Taiwan)
Lih-Wen Laih, Chunghua Telecom Co., Ltd. (Taiwan)
Tien-Tsorng Shih, Chunghua Telecom Co., Ltd. (Taiwan)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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