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Proceedings Paper

Anomalous shift of the recombination energy in single asymmetric quantum wells
Author(s): Fanyao Qu; N. O. Dantas; P. C. Morais
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Paper Abstract

Self-consistent numerical calculation and photoluminescence (PL) measurements have been used to investigate the temperature dependence of the optical Stark effect in n-doped GaAs/AlGaAs single asymmetry quantum wells (SAQWs), grown by molecular beam epitaxy. In the low-temperature regime (5 to 40 K) a remarkable blue shift (9.8 meV) is observed in the PL peak energy, as the optical excitation intensity increases from 0.03 to 90 W/cm2. The blue shift is well explained by the reduction of the two-dimensional electron gas (2DEG) density, due to the charge-transfer mechanism. At about 80 K, however, an anomalous behavior of the PL peak energy was found, i.e. a red shift has been observed as the optical excitation intensity increases. This anomalous behavior has been explained by combining the effects of band gap renormalization, band bending, temperature dependence of the band gap, temperature dependence of the 2DEG density, and temperature dependence of the fundamental energy position.

Paper Details

Date Published: 9 July 2001
PDF: 5 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432619
Show Author Affiliations
Fanyao Qu, Univ. Federal de Uberlandia (Brazil)
N. O. Dantas, Univ. Federal de Uberlandia (Brazil)
P. C. Morais, Univ. de Brasilia (Brazil)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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