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Proceedings Paper

Optical characterization of GaInNAs
Author(s): Richard J. Potter; Simone Mazzucato; Naci Balkan; Michael J. Adams; Paul R. Chalker; Tim B. Joyce; Tim J. Bullough
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Paper Abstract

We report on experimental characterization of GaInNAs and GaInAs semiconductor materials grown on GaAs by Chemical Beam Epitaxy. The optical characterization of the samples has been carried out by orthodox photoluminescence and ellipsometry measurements. We show that even a small amount of nitrogen added to GaInAs has a considerable effect on the optical properties, causing a red shift in the emission wavelength, a reduction in PL efficiency and an increase in the refractive index.

Paper Details

Date Published: 9 July 2001
PDF: 7 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432617
Show Author Affiliations
Richard J. Potter, Univ. of Essex (United Kingdom)
Simone Mazzucato, Univ. of Essex (United Kingdom)
Naci Balkan, Univ. of Essex (United Kingdom)
Michael J. Adams, Univ. of Essex (United Kingdom)
Paul R. Chalker, Univ. of Liverpool (United Kingdom)
Tim B. Joyce, Univ. of Liverpool (United Kingdom)
Tim J. Bullough, Univ. of Liverpool (United Kingdom)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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