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Proceedings Paper

Calculations of the refractive index of AlGaN/GaN quantum well
Author(s): Aleksandra B. Djurisic; Y. Chan; E. Herbert Li
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Paper Abstract

We have calculated the refractive index of a AlxGa1-xN/GaN square quantum well (QW). The imaginary part of the dielectric function has been obtained by summing up the contributions of the dominant interband transitions, excitonic contributions, and the continuum contribution, obtained by weighting the well's and the barrier's continuum contributions. In the calculation of the contribution of the conduction-valence band bound-state effect without electron- hole interaction, conduction bands are assumed to be parabolic and valence bands have been calculated using Chuang's model, but with Chan's basis expansion method instead of finite-difference scheme. Excitonic contribution has been described with an expression derived by the density-matrix approach at the subband edge without the influence of band mixing. The continuum contributions have been described with the modified Adachi's model. The effects of the aluminum model fraction x and the width of the well on the refractive index are analyzed and discussed.

Paper Details

Date Published: 9 July 2001
PDF: 8 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432616
Show Author Affiliations
Aleksandra B. Djurisic, Univ. of Hong Kong (Hong Kong)
Y. Chan, Univ. of Hong Kong (Hong Kong)
E. Herbert Li, Univ. of Hong Kong (United States)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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