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Proceedings Paper

Numerical simulations of novel high-power high-brightness diode laser structures
Author(s): Konstantin Boucke; Joseph Rogg; Marc T. Kelemen; Reinhart Poprawe; Guenter Weimann
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Paper Abstract

One of the key topics in today's semiconductor laser development activities is to increase the brightness of high-power diode lasers. Although structures showing an increased brightness have been developed specific draw-backs of these structures lead to a still strong demand for investigation of alternative concepts. Especially for the investigation of basically novel structures easy-to-use and fast simulation tools are essential to avoid unnecessary, cost and time consuming experiments. A diode laser simulation tool based on finite difference representations of the Helmholtz equation in 'wide-angle' approximation and the carrier diffusion equation has been developed. An optimized numerical algorithm leads to short execution times of a few seconds per resonator round-trip on a standard PC. After each round-trip characteristics like optical output power, beam profile and beam parameters are calculated. A graphical user interface allows online monitoring of the simulation results. The simulation tool is used to investigate a novel high-power, high-brightness diode laser structure, the so-called 'Z-Structure'. In this structure an increased brightness is achieved by reducing the divergency angle of the beam by angular filtering: The round trip path of the beam is two times folded using internal total reflection at surfaces defined by a small index step in the semiconductor material, forming a stretched 'Z'. The sharp decrease of the reflectivity for angles of incidence above the angle of total reflection leads to a narrowing of the angular spectrum of the beam. The simulations of the 'Z-Structure' indicate an increase of the beam quality by a factor of five to ten compared to standard broad-area lasers.

Paper Details

Date Published: 9 July 2001
PDF: 7 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432611
Show Author Affiliations
Konstantin Boucke, Fraunhofer Institute for Laser Technology (Germany)
Joseph Rogg, Fraunhofer Institute for Applied Solid State Physics (Germany)
Marc T. Kelemen, Fraunhofer Institute for Applied Solid State Physics (Germany)
Reinhart Poprawe, Fraunhofer Institute for Laser Technology (Germany)
Guenter Weimann, Fraunhofer Institute for Applied Solid State Physics (Germany)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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