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Proceedings Paper

Transverse-mode control in GaN-based laser diodes
Author(s): Hiroshi Amano; Satoshi Kamiyama; T. Detchprohm; Toshiyuki Sato; Motoaki Iwaya; Shugo Nitta; Shinji Terao; Isamu Akasaki
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Paper Abstract

Transverse mode in GaN-based violet laser diodes for both vertical and horizontal directions was investigated. In order to achieve stable fundamental mode operation in vertical direction, thick AlGaN contact layer is found to be effective. For the stabilization of a transverse-mode in horizontal direction of the conventional ridge-waveguide structure, it is necessary to precisely control the remaining thickness of p-AlGaN cladding layer. In comparison, inner stripe structure using AlGaN current blocking layer has wide feasibility of the device parameter, excellent stability of large optical confinement, and small aspect ratio of beam divergence, under the condition of the precise control of the AlN molar fraction in AlGaN current blocking layer.

Paper Details

Date Published: 9 July 2001
PDF: 11 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432610
Show Author Affiliations
Hiroshi Amano, Meijo Univ. (Japan)
Satoshi Kamiyama, Meijo Univ. (Japan)
T. Detchprohm, Meijo Univ. (Japan)
Toshiyuki Sato, Meijo Univ. (Japan)
Motoaki Iwaya, Meijo Univ. (Japan)
Shugo Nitta, Meijo Univ. (Japan)
Shinji Terao, Meijo Univ. (Japan)
Isamu Akasaki, Meijo Univ. (Japan)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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