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Proceedings Paper

Thermal and electronic nonlinearities in semiconductor cavities
Author(s): Giovanna Tissoni; Lorenzo Spinelli; Luigi A. Lugiato; Massimo Brambilla
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Paper Abstract

The dead-space carrier multiplication theory properly predicts the reduction in the excess noise factor in a number of APDs. The theory is applied to measurements, obtained from J. C. Campbell and collaborators at the University of Texas, for InP, InAlAs, GaAs, and AlGaAs APDs with multiplication-region widths ranging from 80 nm to 1600 nm. A refined model for the ionization coefficients is reported that is independent of the width of the device multiplication region of each device. In addition, in comparison to predictions from the conventional multiplication theory, the dead-space multiplication theory predicts a reduction in the mean bandwidth as well as a reduction in the power spectral density of the impulse response. In particular, it is shown that the avalanching noise at high-frequencies is reduced as a result of the reduction of the multiplication region width.

Paper Details

Date Published: 9 July 2001
PDF: 9 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432608
Show Author Affiliations
Giovanna Tissoni, INFM/Univ. dell'Insubria (Italy)
Lorenzo Spinelli, INFM/Univ. dell'Insubria (Italy)
Luigi A. Lugiato, INFM/Univ. dell'Insubria (Italy)
Massimo Brambilla, INFM/Politecnico di Bari (Italy)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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