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Proceedings Paper

Novel RiS-type InGaN MQW laser diodes on FIELO GaN substrates
Author(s): Masaru Kuramoto; Akitaka Kimura; Chiaki Sasaoka; Takahiro Arakida; Masaaki Nido; Masashi Mizuta
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Paper Abstract

A novel ridge structure fabricated by selective-area epitaxial growth is proposed for InGaN MQW laser diodes (LDS). This technique is capable of precisely controlling the active ridge width and height, thus enabling stable single transverse-mode operation. Together with a backside n-contact on a low-dislocation-density GaN substrate, this structure provides high productivity and performance for GaN-based blue-violet LDs. The LDs fabricated by this technique have achieved continuous-wave operation at more than 30 mW up to a temperature of 90 degrees C, with a characteristic temperature T0 of 105 K from 20 to 90 degrees C. The laser design and characteristics are discussed in detail.

Paper Details

Date Published: 9 July 2001
PDF: 9 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432599
Show Author Affiliations
Masaru Kuramoto, NEC Corp. (Japan)
Akitaka Kimura, NEC Corp. (Japan)
Chiaki Sasaoka, NEC Corp. (Japan)
Takahiro Arakida, NEC Corp. (Japan)
Masaaki Nido, NEC Corp. (Japan)
Masashi Mizuta, NEC Corp. (Japan)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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