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Proceedings Paper

Theoretical analysis of polarization sensitivity of strained bulk SOAs
Author(s): Takaaki Kakitsuka; Yasuo Shibata; Masayuki Itoh; Yuichi Tohmori; Yuzo Yoshikuni
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Paper Abstract

The polarization dependence of 1550-nm SOAs based on tensile strained bulk InGaAsP is analyzed numerically, focusing on their wavelength and gain dependence. We demonstrate that strained bulk SOAs are applicable for a wide range of carrier density and wavelength. The gain spectra are calculated based on the k.p method, and the carrier-density and wavelength dependence of the gain is evaluated. We demonstrate that the optimization enables us to make SOAs whose gain polarization sensitivity is within 1 dB under a 20-dB gain in a 60-nm bandwidth in real devices.

Paper Details

Date Published: 9 July 2001
PDF: 8 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432589
Show Author Affiliations
Takaaki Kakitsuka, NTT Photonics Labs. (Japan)
Yasuo Shibata, NTT Photonics Labs. (Japan)
Masayuki Itoh, NTT Photonics Labs. (Japan)
Yuichi Tohmori, NTT Photonics Labs. (Japan)
Yuzo Yoshikuni, NTT Photonics Labs. (Japan)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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