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Proceedings Paper

Microscopic modeling of GalnNAs semiconductor lasers
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Paper Abstract

We calculate microscopically the gain and absorption, linewidth enhancement factor and carrier capture times for a GaInNAs/GaAs quantum-well laser operating in the 1.3 micrometers wavelength regime. The results are compared to those for an InGaAsP/InP and an InGaAlAs/InP structure with similar fundamental transition energies. The much higher confinement for carriers in the GaInNAs quantum well is shown to lead to larger gain bandwidths and, for low to moderate carrier densities, to lower linewidth enhancement factors than for the later two material systems. On the other hand, the high depth of the wells leads to longer carrier capture times in GaInNAs/GaAs.

Paper Details

Date Published: 9 July 2001
PDF: 10 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432581
Show Author Affiliations
Joerg Hader, Univ. of Arizona (United States)
Jerome V. Moloney, Univ. of Arizona (United States)
Eoin P. O'Reilly, Univ. of Surrey (Ireland)
Martin R. Hofmann, Philipps-Univ. Marburg (Germany)
Stephan W. Koch, Philipps-Univ. Marburg (Germany)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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