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Proceedings Paper

Experimental characterization and analysis of the static behavior of twin-ridge AlGaInAs laterally coupled lasers (LCDL)
Author(s): Brendan J. Roycroft; Pekko Sipilae; Petri Melanen; Pekka Savolainen; Markus Pessa; Manuel Leones; Sara Perez; Guillermo Carpintero; Horacio Lamela
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Paper Abstract

Laterally coupled diode lasers emitting at 1.3 um are presented. Devices were fabricated with distances between ridges varying from 2.76 um to 8.32 um. Electronic coupling effects are investigated by individually varying the currents in each ridge while monitoring output power. It is observed that for devices with 8.32 um separation between ridges there is minimal current sharing, whereas for 2.76 um separation there is considerable current sharing. Optical coupling is measured via the far-field, where most devices show out-of-phase locking, although in-phase locking is observed in a minority of cases. Devices therefore show conditions necessary for the observation of high speed dynamics.

Paper Details

Date Published: 9 July 2001
PDF: 6 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432579
Show Author Affiliations
Brendan J. Roycroft, Univ. Carlos III de Madrid (Ireland)
Pekko Sipilae, Tampere Univ. of Technology (Finland)
Petri Melanen, Tampere Univ. of Technology (Finland)
Pekka Savolainen, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)
Manuel Leones, Univ. Carlos III de Madrid (Spain)
Sara Perez, Univ. Carlos III de Madrid (Spain)
Guillermo Carpintero, Univ. Carlos III de Madrid (Spain)
Horacio Lamela, Univ. Carlos III de Madrid (Spain)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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