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Proceedings Paper

Emission dynamics of (GaIn)(NAs)/GaAs lasers emitting at 1.3 um
Author(s): Martin R. Hofmann; Nils Gerhardt; Anke Wagner; Christoph Ellmers; Falko Hoehnsdorf; Joerg Koch; Bernd Borchert; A. Yu. Egorov; Henning Riechert; Wolfgang Stolz; Wolfgang W. Ruehle
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Paper Abstract

The emission dynamics of an optically pumped 1.3 +m (GaIn)(NAs)/GaAs vertical-cavity surface-emitting laser is investigated. We achieve room-temperature operation at 1285 nm with a low optical pumping threshold and fast emission dynamics: A minimum peak delay of 15.5 ps and a minimum pulse width of 10.5 ps are observed after excitation with 100 fs pulses. Laser operation with picosecond emission dynamics is demonstrated over a wide temperature range from 30 K to 388 K. We explain this extraordinarily large temperature operation range on the basis of measurements of the optical gain in (GaIn)(NAs)/GaAs. We find a gain broadening at elevated carrier densities due to contributions of higher subband transitions.

Paper Details

Date Published: 9 July 2001
PDF: 11 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432573
Show Author Affiliations
Martin R. Hofmann, Philipps-Univ. Marburg (Germany)
Nils Gerhardt, Philipps-Univ. Marburg (Germany)
Anke Wagner, Philipps-Univ. Marburg (Germany)
Christoph Ellmers, Philipps-Univ. Marburg (Germany)
Falko Hoehnsdorf, Philipps-Univ. Marburg (Germany)
Joerg Koch, Philipps-Univ. Marburg (Germany)
Bernd Borchert, Infineon Technologies (Germany)
A. Yu. Egorov, Infineon Technologies (Germany)
Henning Riechert, Infineon Technologies (Germany)
Wolfgang Stolz, Philipps-Univ. Marburg (Germany)
Wolfgang W. Ruehle, Philipps-Univ. Marburg (Germany)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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