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Proceedings Paper

Improved high-temperature operation of InGaAs/AlGaAs LOC SQW diode lasers by incorporation of short-period superlattice quantum-well barriers
Author(s): Nicolas Wiedmann; Juergen Jandeleit; Michael Mikulla; Rudolf Kiefer; G. Bihlmann; Reinhart Poprawe; Guenter Weimann
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Paper Abstract

InGaAs/AlGaAs large optical cavity (LOC) single quantum well (SQW) lasers emitting at 980nm were grown incorporating an AlGaAs/GaAs short-period superlattice layer next to the quantum well in order to improve the carrier confinement and thus high-temperature operation. Symmetric and asymmetric structures have been realized. High characteristic temperatures T0 above 300K between 20#C and 50#C operating temperature were measured for the symmetric structures without deterioration of the internal quantum efficiencies (> 90%) and low intrinsic losses (about 1cm-1). The improvement in the characteristic temperature is mainly attributed to the reduced thermionic emission of the carriers out of the quantum well due to the large effective barrier height of the short-period superlattice. Caused by the incorporation of the short-period superlattice the devices showed a higher series resistance, which could be lowered by switching to asymmetric structures. These asymmetric devices had unchanged high internal quantum efficiencies and low intrinsic losses but lower characteristic temperatures of about 250K.

Paper Details

Date Published: 9 July 2001
PDF: 9 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432572
Show Author Affiliations
Nicolas Wiedmann, Fraunhofer Institute for Laser Technology and Fraunhofer Institute for Applied Solid State (Germany)
Juergen Jandeleit, Fraunhofer Institute for Laser Technology (United States)
Michael Mikulla, Fraunhofer Institute for Applied Solid State PhysicsFraunhofer-Institut fuer Angewandte Fe (Germany)
Rudolf Kiefer, Fraunhofer Institute for Applied Solid State Physics (Germany)
G. Bihlmann, Fraunhofer Institute for Applied Solid State Physics (Germany)
Reinhart Poprawe, Fraunhofer Institute for Laser Technology (Germany)
Guenter Weimann, Fraunhofer Institute for Applied Solid State Physics (Germany)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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