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Proceedings Paper

CBE growth of GaInNAs quantum wells and dots for long-wavelength lasers
Author(s): Tomoyuki Miyamoto; T. Kageyama; S. Makino; Yoshihiko Ikenaga; Fumio Koyama; Kenichi Iga
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Paper Abstract

The GaInNAs is an attractive material for long wavelength lasers on a GaAs substrate and the GaInNAs vertical cavity surface emitting laser (VCSEL) is a viable candidate for low cost and high performance lasers of 1.3micrometers wavelength networks due to excellent temperature characteristics and manufacturing capability of VCSELs. We have successfully grown GaInNAs quantum wells by chemical beam epitaxy and investigated the growth condition toward better crystal quality by employing a radical nitrogen source and thermla annealing. Lasing characteristics of CBE grown 1.2 micrometers GaInNAs lasers are a threshold current density of less than 1kA/cm2, and high temperature operation up to 170 degrees C with an excellent slope efficiency change below -0.004dB/K. A characteristic temperature of 270K is also demonstrated. GaInNAs quantum dots were also investigated for the further progress of GaInNAs lasers. The growth of self-organized Qds and a lasing operation at 77K was demonstrated.

Paper Details

Date Published: 9 July 2001
PDF: 12 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432570
Show Author Affiliations
Tomoyuki Miyamoto, Tokyo Institute of Technology (Japan)
T. Kageyama, Tokyo Institute of Technology (Japan)
S. Makino, Tokyo Institute of Technology (Japan)
Yoshihiko Ikenaga, Tokyo Institute of Technology (Japan)
Fumio Koyama, Tokyo Institute of Technology (Japan)
Kenichi Iga, Tokyo Institute of Technology (Japan)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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