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Proceedings Paper

Long-wavelength In(Ga)As/GaAs quantum dot electroluminescent devices
Author(s): Pallab Bhattacharya; Sanjay Krishna; Jasprit Singh; Patrick J. McCann; Khosrow Namjou
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Paper Abstract

The properties of quantum dot intersubband light emitters and the unique carrier dynamics in the quantum dots that lead to the realization of these long wavelength devices are described. The favorable relaxation times can be exploited to realize far IR emission and detection based on intersubband transitions in the dots.

Paper Details

Date Published: 9 July 2001
PDF: 5 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432565
Show Author Affiliations
Pallab Bhattacharya, Univ. of Michigan (United States)
Sanjay Krishna, Univ. of Michigan (United States)
Jasprit Singh, Univ. of Michigan (United States)
Patrick J. McCann, Univ. of Oklahoma (United States)
Khosrow Namjou, Univ. of Oklahoma (United States)

Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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