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Proceedings Paper

Comparative study of the spontaneous and stimulated emission of M- and C-plane GaN/(Al,Ga)N quantum wells
Author(s): Bjoern Rau; P. Waltereit; Oliver Brandt; A. Trampert; Klaus H. Ploog; Joachim Puls; Fritz Henneberger
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Paper Abstract

Using 6H-SiC(0001) and (gamma) -LiAlO2(100) substrates, identically designed GaN/(Al,Ga)N heterostructures with (C- plane)- and (M-plane)-orientation, respectively, are grown by plasma-assisted molecular beam epitaxy. The latter case is of special interest, because such structures with the hetero-interface parallel to the hexagonal c-axis are free of electrostatic fields. This fact leads to distinct differences in the spontaneous emission. While the photoluminescence from the conventional oriented wells is unpolarized, a strong polarization anisotropy of over 90 percent is observed for the M-plane sample. The data are in excellent agreement with the expectations from the known valence band structure of wurzite GaN, taking into account a confinement induced admixture of the different subvalence bands in the M-plane quantum well. Secondly, a distinctly enhanced recombination rate in the electrostatic-field free M-plane sample with respect to the C-plane MQW is seen in time-resolved photoluminescence studies proving the increased electron-hole overlap in the M-plane case. Photoluminescence studies at high excitation densities are carried out to uncover the physical gain mechanism for both kinds of heterostructures.

Paper Details

Date Published: 9 July 2001
PDF: 8 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432555
Show Author Affiliations
Bjoern Rau, Humboldt-Univ. zu Berlin (Germany)
P. Waltereit, Univ. of California/Santa Barbara (Germany)
Oliver Brandt, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)
A. Trampert, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)
Klaus H. Ploog, Paul-Drude-Institut fuer Festkoerperelektronik (Germany)
Joachim Puls, Humboldt-Univ. zu Berlin (Germany)
Fritz Henneberger, Humboldt-Univ. zu Berlin (Germany)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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