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Proceedings Paper

AlGaN/GaN MBE heterostructures: polarization effects and their implication on electronic properties
Author(s): Angela Rizzi; R. Lantier; Martin Kocan; Dirk Doerner; Hans Lueth; Alessandra Catellani
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Paper Abstract

The origin of the strong polarization fields in nitride heterostructures is discussed by comparing the symmetry properties of zincblende and wurtzite structures. Some peculiar effects in nitride heterostructure electronic properties, induced by the polarization fields are considered, like the determination of the valence band offset by x-ray photo emission spectroscopy (XPS) and the formation of 2D electron gases in AlGaN/GaN. The Fermi level position at MBE GaN, AlGaN and AlN surfaces has been measured in-situ by XPS. The role played by surface states has been emphasized, experimentally and through self consistent calculations.

Paper Details

Date Published: 9 July 2001
PDF: 11 pages
Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); doi: 10.1117/12.432554
Show Author Affiliations
Angela Rizzi, Forschungszentrum Juelich GmbH and Univ. di Modena (Germany)
R. Lantier, Forschungszentrum Juelich GmbH (Germany)
Martin Kocan, Forschungszentrum Juelich GmbH (Germany)
Dirk Doerner, Forschungszentrum Juelich GmbH (Germany)
Hans Lueth, Forschungszentrum Juelich GmbH (Germany)
Alessandra Catellani, CNR-MASPEC (Italy)


Published in SPIE Proceedings Vol. 4283:
Physics and Simulation of Optoelectronic Devices IX
Yasuhiko Arakawa; Peter Blood; Marek Osinski, Editor(s)

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