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Proceedings Paper

ITO thin film fabrication assisted by the infrared free-electron laser
Author(s): Masato Yasumoto; Akira Ishizu; Natsuro Tsubouchi; Kunio Awazu; Takio Tomimasu
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Paper Abstract

We fabricated the ITO (In-Sn-O) thin film assisted by the infrared free electron laser (12.1 micron-meter-FEL). The novel method can in principle excite the vibration mode of the deposited molecules with matching the FEL energy and the molecular vibration-energy. The method thus is independent of the substrate temperature and has the advantage of fabrication on the low-temperature substrate. The ITO thin- film fabricated by the novel method preliminarily indicates similar transparency to one fabricated by the conventional method.

Paper Details

Date Published: 29 June 2001
PDF: 6 pages
Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432544
Show Author Affiliations
Masato Yasumoto, Osaka National Research Institute (Japan)
Akira Ishizu, Free-Electron Laser Research Institute (Japan)
Natsuro Tsubouchi, Osaka Univ. (Japan)
Kunio Awazu, Osaka Univ. (Japan)
Takio Tomimasu, Free-Electron Laser Research Institute (Japan)

Published in SPIE Proceedings Vol. 4274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing VI
Malcolm C. Gower; Henry Helvajian; Koji Sugioka; Jan J. Dubowski, Editor(s)

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