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Proceedings Paper

Novel laser trimming technique for microelectronics
Author(s): Michel Meunier; Yves Gagnon; Yvon Savaria; Alain Lacourse; Maxime Cadotte
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Paper Abstract

A novel laser trimming technique, fully compatible with conventional CMOS processes, is described for analogue and mixed microelectronics applications. In this method, a laser beam is used to create a resistive device by melting a silicon area, thereby forming an electrical link between two adjacent p-n junction diodes. These laser diffusible resistances can be made in less than a second with an automated system and their values can be in the range of 100 ohms to a few M ohms, with an accuracy of 50 ppm, by using an iterative process. In addition, these resistances can also be made to possess a thermal coefficient close to zero. We present the method used to create these resistances, the main device characterization and some insight on the process modeling.

Paper Details

Date Published: 29 June 2001
PDF: 8 pages
Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432531
Show Author Affiliations
Michel Meunier, Ecole Polytechnique de Montreal and LTRIM-Technologies (Canada)
Yves Gagnon, LTRIM-Technologies (Canada)
Yvon Savaria, Ecole Polytechnique de Montreal and LTRIM-Technologies (Canada)
Alain Lacourse, Ecole Polytechnique de Montreal and LTRIM-Technologies (Canada)
Maxime Cadotte, Ecole Polytechnique de Montreal (Canada)


Published in SPIE Proceedings Vol. 4274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing VI
Malcolm C. Gower; Henry Helvajian; Koji Sugioka; Jan J. Dubowski, Editor(s)

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