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Proceedings Paper

Synthesis of silicon nanoparticles and impurity doping by laser ablation
Author(s): Kouichi Murakami; Tetsuya Makimura; Taiji Mizuta; Changquing Li; Daishi Takeuchi
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Paper Abstract

We have utilized pulsed-laser ablation in ambient inert gas to synthesize silicon (Si) nanoparticles and to perform surface modification and impurity doping. The dynamical growing process of Si nanoparticles has been investigated by measuring time-resolved light emission induced by the second pulsed-laser irradiation with a delayed time. It was found from the time-resolved measurements that the onset of the formation of Si nanoparticles appears at around 1 ms, on inert gas pressure and laser fluence. We demonstrate that light emission can be controlled by adding hydrogen or oxygen gas to inert gas. It is also demonstrated that the thermal quenching which has been serious problem in Er-doped semiconductors can be removed in 1.54 micrometers photoluminescence of Er-doped Si nanocrystallites. These results suggest that laser ablation is useful not only for synthesis of nanostructured materials such as nanoparticles and nanowires/nanotubes, but for their surface modification and impurity doping that are important techniques for realizing functional nanostructures.

Paper Details

Date Published: 29 June 2001
PDF: 10 pages
Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432512
Show Author Affiliations
Kouichi Murakami, Univ. of Tsukuba (Japan)
Tetsuya Makimura, Univ. of Tsukuba (Japan)
Taiji Mizuta, Univ. of Tsukuba (Japan)
Changquing Li, Univ. of Tsukuba (Japan)
Daishi Takeuchi, Univ. of Tsukuba (Japan)

Published in SPIE Proceedings Vol. 4274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing VI
Malcolm C. Gower; Henry Helvajian; Koji Sugioka; Jan J. Dubowski, Editor(s)

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