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Proceedings Paper

GaN etching by simultaneous irradiation of KrF excimer laser and F2 laser
Author(s): Toshimitsu Akane; Koji Sugioka; Kotaro Obata; Shintaro Nomura; Kiyotaka Hammura; Naoko Aoki; Koichi Toyoda; Yoshinobu Aoyagi; Katsumi Midorikawa
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Paper Abstract

Etching of GaN by ablation using KrF excimer or F2 laser has been demonstrated, as well as simultaneous irradiation of F2 laser with KrF excimer laser to GaN has been explored. The GaN etching process is consisted of the following sequential procedures: laser ablation and an acid chemical treatment for residue removal. Single-pulse irradiation of KrF excimer laser as well as F2 laser planarizes the etched GaN surface. Multiple KrF irradiation roughens etched GaN surface significantly; however, low intensity F2 laser simultaneously irradiated with the KrF excimer laser improves the surface roughness. Complete removal of 700 nm-GaN is accomplished by 10 pulses with a laser intensity of approximately 40 x 106 W/cm2, besides, very sharp etching sidewall and extremely flat sapphire surface are obtained.

Paper Details

Date Published: 29 June 2001
PDF: 8 pages
Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432505
Show Author Affiliations
Toshimitsu Akane, RIKEN-The Institute of Physical and Chemical Research (Japan)
Koji Sugioka, RIKEN-The Institute of Physical and Chemical Research (Japan)
Kotaro Obata, RIKEN-The Institute of Physical and Chemical Research (Japan)
Shintaro Nomura, Univ. of Tsukuba (Japan)
Kiyotaka Hammura, RIKEN-The Institute of Physical and Chemical Research (Japan)
Naoko Aoki, Science Univ. of Tokyo (Japan)
Koichi Toyoda, Science Univ. of Tokyo (Japan)
Yoshinobu Aoyagi, RIKEN-The Institute of Physical and Chemical Research (Japan)
Katsumi Midorikawa, RIKEN-The Institute of Physical and Chemical Research (Japan)


Published in SPIE Proceedings Vol. 4274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing VI
Malcolm C. Gower; Henry Helvajian; Koji Sugioka; Jan J. Dubowski, Editor(s)

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