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Proceedings Paper

Time-resolved study of femtosecond microfabrication in silica glass
Author(s): Hiroaki Misawa; Saulius Juodkazis; Andrius Marcinkevicius; Mitsuru Watanabe; Vygantas Mizeikis; Shigeki Matsuo
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Paper Abstract

We report investigation of light-induced damage threshold (LIDT) in purified silica (transmission band down to 160 nm) by 350 fs laser pulses at the wavelength of 795 nm and 498 nm. Focusing a single pulse by a high numeric aperture NA equals 1.35 microscope objective lens results in one of the lowest single-show bulk LIDT values reported so far, 5 J/cm2, while the surface ablation threshold is 2.5 J/cm2 with both values being well below the critical self-focusing power in silica. Furthermore, we report the peculiarities of damage by two-pulse irradiation (duration experimental data and numeric simulation, which takes into account optical free-carrier generation and relaxation, demonstrates that these processes can explain the measured self-focusing, super-continuum generation, and light-induced damage threshold values. We argue that use of high numeric aperture objective, despite substantial temporal pulse stretching, results in tight focusing which is capable of overcoming the beam self-focusing, and the resulting fabrication quality is comparable to that obtained using shorter pulses.

Paper Details

Date Published: 29 June 2001
PDF: 12 pages
Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432501
Show Author Affiliations
Hiroaki Misawa, Univ. of Tokushima (Japan)
Saulius Juodkazis, Univ. of Tokushima (Japan)
Andrius Marcinkevicius, Univ. of Tokushima (Japan)
Mitsuru Watanabe, Univ. of Tokushima (Japan)
Vygantas Mizeikis, Univ. of Tokushima (Japan)
Shigeki Matsuo, Univ. of Tokushima (Japan)


Published in SPIE Proceedings Vol. 4274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing VI
Malcolm C. Gower; Henry Helvajian; Koji Sugioka; Jan J. Dubowski, Editor(s)

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