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Proceedings Paper

Structuring silicon with femtosecond lasers
Author(s): Hans Kurt Toenshoff; Andreas Ostendorf; Thilo Wagner
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Paper Abstract

In this paper, basic examinations on the laser cutting of silicon using ultrashort ((tau) H equals 150 fs) laser pulses are presented. The influence of the polarization on the cutting process is investigated. It was found that significant deviations from the ideal cut geometry occur if the polarization is parallel to the cutting motion. An innovative automated method using image processing to assess the quality of cuts is discussed. On the basis of this method, it is shown that the deviations increase with the depth of the cut. Hence, it is suggested that deviations are caused by reflection. Two models for simulating the influence of different polarizations on the intensity distribution on the ablation ground for cutting and drilling are discussed.

Paper Details

Date Published: 29 June 2001
PDF: 10 pages
Proc. SPIE 4274, Laser Applications in Microelectronic and Optoelectronic Manufacturing VI, (29 June 2001); doi: 10.1117/12.432500
Show Author Affiliations
Hans Kurt Toenshoff, Laser Zentrum Hannover e.V. (Germany)
Andreas Ostendorf, Laser Zentrum Hannover e.V. (Germany)
Thilo Wagner, Laser Zentrum Hannover e.V. (Germany)

Published in SPIE Proceedings Vol. 4274:
Laser Applications in Microelectronic and Optoelectronic Manufacturing VI
Malcolm C. Gower; Henry Helvajian; Koji Sugioka; Jan J. Dubowski, Editor(s)

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