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Proceedings Paper

Infrared laser annealing of nanoporous silicon
Author(s): Valerii P. Aksenov; G. N. Mikhailova; Johannes Boneberg; Paul Leiderer; H.-J. Muenzer
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Paper Abstract

We have investigated the correlation of photoluminescence (PL) properties with certain etching conditions and laser annealing of porous silicon (PS). We used the optical second-harmonic generation and photoluminescence methods for studies of IR laser annealing of porous silicon. We observed that IR illumination by series of laser pulses causes decreasing of SH signal and increasing of luminescence efficiency for PS samples.

Paper Details

Date Published: 26 June 2001
PDF: 4 pages
Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431242
Show Author Affiliations
Valerii P. Aksenov, General Physics Institute (Russia)
G. N. Mikhailova, General Physics Institute (Russia)
Johannes Boneberg, Univ. of Konstanz (Switzerland)
Paul Leiderer, Univ. of Konstanz (Germany)
H.-J. Muenzer, Univ. of Konstanz (Germany)


Published in SPIE Proceedings Vol. 4423:
Nonresonant Laser-Matter Interaction (NLMI-10)
Mikhail N. Libenson, Editor(s)

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