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Proceedings Paper

Dynamics of 3D representation of interfaces in UV-induced chemical vapor deposition: experiments, modeling, and simulation for silicon nitride thin layers
Author(s): Jean Flicstein; E. Guillonneau; Jose Marquez; L. S. How Kee Chun; D. Maisonneuve; C. David; Zh. Zh. Wang; Jean Francois Palmier; J. L. Courant
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Paper Abstract

We study the surface dynamics of silicon nitride films deposited by UV-induced low pressure chemical vapor pressure. Atomic force microscopy measurements show that the surface reaches a scale invariant stationary state coherent wit the Kardar-Parisi-Zhang (KPZ) equation. Discrete geometry techniques are oriented to extra morphological characteristics of surface and bulk which corresponds to computer simulated photodeposit. This allows to determine the physical origin of KPZ scaling to be al ow value of the surface sticking probability, and connected to the surface concentration of activate charged centers, which permits to start the evaluation of the Monte Carlo-molecular dynamics simulator.

Paper Details

Date Published: 26 June 2001
PDF: 8 pages
Proc. SPIE 4423, Nonresonant Laser-Matter Interaction (NLMI-10), (26 June 2001); doi: 10.1117/12.431234
Show Author Affiliations
Jean Flicstein, France Telecom CNET (France)
E. Guillonneau, France Telecom CNET (France)
Jose Marquez, Ecole Nationale Superieure des Telecommunications (Germany)
L. S. How Kee Chun, Opto+ (France)
D. Maisonneuve, France Telecom CNET (France)
C. David, L2M/CNRS (France)
Zh. Zh. Wang, L2M/CNRS (France)
Jean Francois Palmier, Opto+ (France)
J. L. Courant, Opto+ (France)

Published in SPIE Proceedings Vol. 4423:
Nonresonant Laser-Matter Interaction (NLMI-10)
Mikhail N. Libenson, Editor(s)

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